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Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers

Multiwafer Feststoffquellen MBE auf InP-Substrat für DHBT und Aluminiumfreie Laser
 
: Aidam, R.; Lösch, R.; Walther, M.; Driad, R.; Kallenbach, S.

:

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
16th International Conference on Indium Phosphide and Related Materials, IPRM 2004. Proceedings : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8595-0
S.342-345
International Conference on Indium Phosphide and Related Materials (IPRM) <16, 2004, Kagoshima>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
molecular beam epitaxy; Molekularstrahlepitaxie; phosphide; laser diode; Laserdiode; bipolar transistor; bipolarer Transistor

Abstract
InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus molecular beam epitaxy system. The growth of InP, carbon-doped InGaAs, and quaternary InGaAsP was studied in detail. DHBTs display a common emitter current gain Beta of 65. Cutoff frequencies values of more than 200 GHz for both f(ind t) and f(ind max) have been achieved. Tapered diode lasers reach continuous wave output power levels of 1.5 W at room temperature.

: http://publica.fraunhofer.de/dokumente/N-23578.html