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Linewidth narrowing and power scaling of single-frequency 2.X µm GaSb-based semiconductor disk lasers

: Kaspar, S.; Rattunde, M.; Töpper, T.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.


IEEE Journal of Quantum Electronics 49 (2013), Nr.3, S.314-324
ISSN: 0018-9197
Fraunhofer IAF ()
GaSb-based semiconductor disk laser; near-to-mid-infrared laser; Pound-Drever-Hall laser stabilization; power scaling; single-frequency narrow-linewidth emission

A study of frequency stability and power scaling of single-mode GaSb-based 2.05-mu m semiconductor disk laser (SDL) modules is presented. Single-mode emission and wavelength tuning over a range of 120 nm is accomplished by inserting a birefringent filter into the cavity. In order to evaluate the frequency stability, heterodyne beat-note linewidth measurements are performed for different time scales. Furthermore, a deeper insight in relevant noise mechanisms could be obtained by determining the Allan deviation and the frequency noise spectral density. For reducing the frequency noise, side-of-fringe and Pound-Drever-Hall locking are applied with the cavity length, and for the latter locking scheme also the pump diode current, controlled by the active feedback loop. That way, single-mode operation at a few kHz linewidth up to sampling times >0.1 s are achieved. Operating the SDL in a cavity configuration optimized for higher output powers, up to 1-W output power at a 100-mu s sampled linewidth of 20 kHz were obtained when using active stabilization.