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Silicon carbide radiation detector for harsh environments

 
: Metzger, Stefan; Henschel, Henning; Köhn, Otmar; Lennartz, Wilhelm

:

Bandiera, Leonardo (Ed.) ; Institute of Electrical and Electronics Engineers -IEEE-:
RADECS 2001, 6th European Conference on Radiation and Its Effects on Components and Systems : Grenoble, France, 10 - 14 September 2001
Piscataway, NJ: IEEE Operations Center, 2001
ISBN: 0-7803-7313-8
S.51-56
European Conference on Radiation and its Effects on Components and Systems (RADECS) <6, 2001, Grenoble>
Englisch
Konferenzbeitrag
Fraunhofer INT ()
commercial off-the-shelf SiC ultraviolet photodiodes; gamma dose rates; signal-to-noise ratio; radiation-induced current; dark current; proton irradiation; neutron irradiation; radiation hardness; neutron dose rate; neutron dose-rate meter; gamma dose-rate meter; proton dose-rate meter; SiC

Abstract
We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal-to-noise ratio (SNR), and good linearity. They were operated at temperatures up to 200 degrees C with negligible changes of the dark and the radiation-induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32-MeV proton irradiations up to a fluence of 8.5 x 10/sup 12/ cm/sup -2/, and 14-MeV neutron irradiations up to 4.1 x 10/sup 12/ cm/sup -2/ demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.

: http://publica.fraunhofer.de/dokumente/N-233097.html