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Heavy ion microscopy of single event upsets in CMOS SRAMs

 

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Nuclear and Plasma Sciences Society:
Second European Conference on Radiation and its Effects on Components and Systems, RADECS 1993 : Short-course, conferences, exhibition; September 13 - 16, 1993, Palais du Grand Large, Saint-Malo, France
Piscataway, NJ: IEEE Service Center, 1994
ISBN: 0-7803-1793-9
ISBN: 0-7803-1794-7
S.499-502
European Conference on Radiation and its Effects on Components and Systems (RADECS) <2, 1993, Saint-Malo>
Englisch
Konferenzbeitrag
Fraunhofer INT ()

Abstract
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibilty to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions we can predict SEU cross-sections.
For a MHS65 162 2k x 8bit CMOS SRAM we found two regions per bit with different sensitivity and measured a total cross-section of (71 +/- 18)µm² for a bitflip per cell and simulated 60µm² with an argon beam of 1.4 Mev/nucl. (LET of 19.7 MeV/mg/cm²).

: http://publica.fraunhofer.de/dokumente/N-233095.html