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Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs

: Ospald, F.


Institute of Electrical and Electronics Engineers -IEEE-:
37th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2012 : University of Wollongong, Australia, September 23 - 28, 2012
Piscataway/NJ: IEEE, 2012
ISBN: 978-1-4673-1598-2 (Print)
ISBN: 978-1-4673-1596-8 (Online)
ISBN: 978-1-4673-1597-5
2 S.
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <37, 2012, Wollongong/Australia>
Fraunhofer IPM ()
antenna; crystal; detector; gallium arsenide; laser excitation; principal component analysis; pump laser; III-V semiconductor; terahertz wavedetector

Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In0.53Ga0.47As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored.