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InAs/GaSb superlattice infrared detectors

: Rehm, R.; Masur, J.-M.; Schmitz, J.; Daumer, V.; Niemasz, J.; Vandervelde, T.; DeMeo, D.; Luppold, W.; Wauro, M.; Wörl, A.; Rutz, F.; Scheibner, R.; Ziegler, J.; Walther, M.


Infrared physics and technology 59 (2013), S.6-11
ISSN: 1350-4495
International Conference on Quantum Structure Infrared Photodetector (QSIP) <2012, Corsica>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InAs/GaSb superlattice; infrared focal plane array; dual-color; MWIR; LWIR; Superlattice empirical pseudopotential method

Future heterojunction InAs/GaSb superlattice (SL) detector devices in the long-wavelength infrared regime (LWIR, 8-12 µm) require an accurate bandstructure model and a successful surface passivation. In this study, we have validated the superlattice empirical pseudopotential method developed by G. C. Dente and M. L. Tilton over a wide range of bandgap energies. Furthermore, dark current data for a novel dielectric surface passivation for LWIR devices is presented. Next, we present a technique for high-resolution, full-wafer mapping of etch pit densities on commercial (100) GaSb substrates, which allows to study the local correlation between threading dislocations in the substrate and the electro-optical pixel performance. Finally, recent performance data for 384×288 dual-color InAs/GaSb superlattice imagers for the mid-wavelength infrared (MWR, 3-5 µm) is given.