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Novel techniques for dopant contrast analysis on real IC structures

 
: Jatzkowski, J.; Simon-Najasek, M.; Altmann, F.

:

Meneghesso, G.:
23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis : October 1 - 5, 2012, Cagliari, Italy
Amsterdam: Elsevier, 2012 (Microelectronics reliability 52.2012, Nr.9/10)
ISSN: 0026-2714
S.2098-2103
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <23, 2012, Cagliari>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IWM ()
scanning electron microscopy; dopant contrast analysis; pn-junction of Silicon based dopant structures

Abstract
In this paper advanced techniques for dopant contrast imaging based on Scanning Electron Microscopy will be presented. It will be shown that biasing the pn-junction of Silicon based dopant structures significantly improves the sensitivity for dopant contrast imaging thus allowing to investigate low doped regions as well as sub-mu m scaled dopant profiles of transistor and diode structures in integrated circuits. This new imaging technique is demonstrated on a defective diode structure of an image sensor device.

: http://publica.fraunhofer.de/dokumente/N-223340.html