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Influences of p- and n-doped Czochralski base material on the performance of silicon based heterojunction solar cells

: Ziegler, J.; Montesdeoca-Santana, A.; Platt, D.; Hohage, S.; Guerrero-Lemus, R.; Borchert, D.


Japanese journal of applied physics 51 (2012), Nr.10, Art.10NA03, 4 S.
ISSN: 0021-4922
ISSN: 1347-4065
Fraunhofer ISE ()
Photovoltaik; Produktionstechnologie; Qualitätssicherung; Silicium-Photovoltaik; industrielle Solarzellenstruktur

In this work we present a cell process for amorphous crystalline silicon heterojunction (SHJ) solar cells based on process steps well known in the photovoltaic industry. All amorphous silicon layers are deposited by plasma enhanced chemical vapor deposition (PECVD) in a one chamber direct plasma reactor working at a radio frequency of 13.56 MHz. The main focus of this work is to study the influence of p- and n-doped Czochralski (Cz) silicon base material with different surface morphology on the cell results of amorphous crystalline SHJ solar cells with intrinsic thin layers. Open circuit voltages V-oc of up to 700mV are obtained on n-type Cz based SHJ cells (area 100 cm(2)) with rough surfaces. On p-type Cz based SHJ cells open circuit voltages were limited by the minority carrier bulk lifetime of the used base material.