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4-12- and 25-34-GHz cryogenic mHEMT MMIC low-noise amplifiers

: Aja, B.; Seelmann-Eggebert, M.; Bruch, D.; Leuther, A.; Massler, H.; Baldischweiler, B.; Schlechtweg, M.; Gallego, J.D.; Lopéz-Fernandez, I.; Diez-González, C.; Malo-Gómez, I.; Villa, E.; Artal, E.


IEEE transactions on microwave theory and techniques 60 (2012), Nr.12, S.4080-4088
ISSN: 0018-9480
Fraunhofer IAF ()
cryogenic low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC)

In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB 1.8 dB and average noise temperature of 5.3 K dB with a low power dissipation of 8 mW.
Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB 0.4 dB with 15.2 K dB , average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications.