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A high gain SiGe-GaN switching power amplifier in the GHz-range

 
: Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R.

:

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012 : 15-17 April 2012; Cocoa Beach, Florida
Piscataway/NJ: IEEE, 2012
ISBN: 978-1-4673-0129-9 (Print)
ISBN: 978-1-4673-0128-2 (Online)
4 S.
Wireless and Microwave Technology Conference (WAMICON) <13, 2012, Cocoa Beach/Fla.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
class-S; digital transmitter; gallium nitride; power amplifier; pulse-width modulation; silicon germanium; switching amplifier

Abstract
This paper reports a GaN switching power amplifier with a complementary SiGe driver stage in a hybrid setup. The gain of the overall amplifier module is higher than 40 dB. Drain efficiency and an overall lineup efficiency of 60 % and 47 % respectively could be achieved at a bit rate of 1 Gbps when operating with a periodic drive signal. An operation up to 4 Gbps using a pseudo random pulse sequence is demonstrated. To the author's knowledge, this is the first time a GaN switching amplifier with a SiGe driver is demonstrated. Furthermore, such a high gain combined with the efficiencies at bit rates above 1 Gbps has not been presented yet.

: http://publica.fraunhofer.de/dokumente/N-223210.html