Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A D-band phase compensated variable gain amplifier

: Müller, D.; Diebold, S.; Massler, H.; Tessmann, A.; Leuther, A.; Zwick, T.; Kallfass, I.


Institute of Electrical and Electronics Engineers -IEEE-:
INMMIC 2012, Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits : 3rd - 4th September 2012, Dublin, Ireland
New York, NY: IEEE, 2012
ISBN: 978-1-4673-2950-7 (Print)
ISBN: 978-1-4673-2948-4 (Online)
ISBN: 978-1-4673-2949-1
3 S.
Wokshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC) <2012, Dublin>
Fraunhofer IAF ()

This paper presents a variable gain amplifier (VGA) for D-band (110 - 170GHz) applications using metamorphic high
electron mobility transistors (mHEMT) with gate lengths of 100 nm. The VGA is based on a cascode architecture with gatewidths of 2x30 J.Im and is designed with phase compensation techniques. The overall chip-size is 0.7SxO.7S mm2• With son terminations and a 2 V supply-voltage the maximum gain is approximately 10 dB with a control range of over 16 dB. Phase deviations versus gain are less than 4° at frequencies around 161 GHz with input- and output return loss both better than -7 dB.