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Efficient simulation of EUV multilayer defects with rigorous data base approach

: Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas

Postprint urn:nbn:de:0011-n-2230496 (1.0 MByte PDF)
MD5 Fingerprint: 1659cb71c63f78f71b497303ae5f2d74
Erstellt am: 9.1.2013

Abboud, F.E. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; BACUS International:
Photomask Technology 2012 : 11 - 13 September 2012, Monterey, California, United States; held as part of the 32nd International Symposium on Photomask Technology
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8522)
ISBN: 978-0-8194-9260-9
Paper 85221S
Conference "Photomask Technology" <2012, Monterey/Calif.>
International Symposium on Photomask Technology <32, 2012, Monterey/Calif.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
Lithography simulation; EUV multilayer defects; rigorous EMF simulation; multilayer defect data base

This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.