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Modeling boron profiles in silicon after pulsed excimer laser annealing

Bodellierung von Borprofilen in Silicium nach gepulster Ausheilung mit einen Excimer Laser
: Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.

Postprint urn:nbn:de:0011-n-2228948 (392 KByte PDF)
MD5 Fingerprint: 255db3e3f796f44e2017b451da2871d8
Copyright AIP
Erstellt am: 15.12.2012

Pelaz, L. ; American Institute of Physics -AIP-, New York:
Ion Implantation Technology 2012. 19th International Conference on Ion Implantation Technology. Proceedings : 25-29 June 2012, Valladolid, Spain
Woodbury, N.Y.: AIP, 2012 (AIP Conference Proceedings 1496)
ISBN: 978-0-7354-1108-1 (Set)
ISBN: 978-0-7354-1109-8 (Book)
ISSN: 0094-243X
International Conference on Ion Implantation Technology (IIT) <19, 2012, Valladolid>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
laser thermal annealing; silicon; simulation; boron; adsorption; ion-beam mixing

In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ~180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measureme nt had to be taken into account to reproduce the measured profiles.