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Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation

Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
 
: Mortet, V.

:
Poster urn:nbn:de:0011-n-2227813 (628 KByte PDF)
MD5 Fingerprint: 51c00031834f5f15b575cb4d486c8fde
Erstellt am: 12.12.2012


2012, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; MOSFET; hall effect; hall mobility; charge carrier density; Coulomb scattering; nitrogen implantation

: http://publica.fraunhofer.de/dokumente/N-222781.html