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Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses

 
: Moser, R.; Kunzer, M.; Goßler, C.; Köhler, K.; Pletschen, W.; Schwarz, U.T.; Wagner, J.

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Volltext urn:nbn:de:0011-n-2213563 (2.0 MByte PDF)
MD5 Fingerprint: 3ad22b42f07042f015d5e9d292742e78
Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 15.8.2013


Optical engineering 51 (2012), Nr.11, Art. 114301, 8 S.
ISSN: 0091-3286
ISSN: 0036-1860
ISSN: 1560-2303
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IAF ()
gallium nitride light-emitting diode; prototyping; ultraviolet; picosecond laser; direct writing; ablation threshold; trench; mesa

Abstract
The fabrication of optoelectronic devices such as light-emitting diodes (LEDs) typically involves photolithography steps, requiring specific lithography masks. This approach is expensive, inflexible and time consuming, in particular for prototyping. Therefore it would be attractive to replace these steps by direct writing techniques such as laser processing, which would speed up, for example the development and prototyping of new devices. Picosecond lasers provide a universal tool for material processing. Due to the short pulse length, material is removed by a process called "cold ablation" with minimal thermal damage to neighboring regions. As a result, better-defined structures with smoother and cleaner side walls can be fabricated compared to nanosecond-pulsed laser-based processing. We report on fully laser-processed planar gallium nitridebased LEDs fabricated using only ps laser processing for pattern definition and material removal. On the bare semiconductor wafer, isolation trenches and mesa structures are formed directly by ultraviolet ps laser pulse writing. For the direct deposition of patterned ohmic contact metallizations, the ps laser fabrication and subsequent use of high-resolution shadow masks is presented. Finally, the ps laser-processed LEDs are electrically and optically characterized and their characteristics compared with those of conventionally fabricated mesa LEDs.

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