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Dual-band class-ABJ AlGaN/GaN high power amplifier

 
: Carrubba, V.

European Microwave Association:
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings : 29-30 Oct 2012, Amsterdam, The Netherlands, European Microwave Week
Louvain-la-Neuve: European Microwave Assiciation, 2012
ISBN: 978-2-87487-028-6
S.635-638
European Microwave Integrated Circuits Conference (EuMIC) <7, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
broadband amplifiers; class-J; GaN; high power amplifiers; multiband

Abstract
This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.

: http://publica.fraunhofer.de/dokumente/N-221344.html