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An efficient AlGaN/GaN HEMT power amplifier MMIC at K-band

 
: Friesicke, C.

European Microwave Association:
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings : 29-30 Oct 2012, Amsterdam, The Netherlands, European Microwave Week
Louvain-la-Neuve: European Microwave Assiciation, 2012
ISBN: 978-2-87487-028-6
S.131-134
European Microwave Integrated Circuits Conference (EuMIC) <7, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 µm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.

: http://publica.fraunhofer.de/dokumente/N-221339.html