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Increased Ion Energies for Texturing in a High-Throughput Plasma Tool

: Piechulla, P.; Seiffe, J.; Hofmann, M.; Rentsch, J.; Preu, R.

Volltext urn:nbn:de:0011-n-2210496 (585 KByte PDF)
MD5 Fingerprint: b5d46d76ea06d7bb3ae91baf99dc11fc
Erstellt am: 7.12.2012

European Commission:
26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC. Proceedings : 5th to 9th September 2011 at the CCH - Congress Centre and International Fair Hamburg in Germany
München: WIP-Renewable Energies, 2011
ISBN: 3-936338-27-2
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <26, 2011, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Produktionstechnologie; Qualitätssicherung; Silicium-Photovoltaik; industrielle Solarzellenstruktur; Produktionsanlage; Prozessentwicklung

Plasma texturing is a promising alternative to wet chemical texturing of solar cells. Processes using increased ion energies have previously been shown to be advantageous on single wafer tools. In this work, the microwave plasma of an inline tool is enhanced by a radiofrequency field, which leads to a DC self bias and thus increased ion energies. A high-throughput process suitable for monocrystalline cells has been developed and characterized by weighted reflection and excess carrier lifetime on float zone material. Additionally, experiments on shiny etched wafers with <111> and <100> orientation have been shown to be a promising approach to finding parameters for etching independent of crystal orientation.