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Investigation of a PECVD Silicon Oxide/Silicon Nitride Passivation System Concerning Process Influences

: Keipert-Colberg, S.; Barkmann, N.; Streich, C.; Schütt, A.; Suwito, D.; Schäfer, P.; Müller, S.; Borchert, D.

Volltext urn:nbn:de:0011-n-2210443 (202 KByte PDF)
MD5 Fingerprint: 8bde90d40ea1d0830b59b29db6d8e148
Erstellt am: 7.12.2012

European Commission:
26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC. Proceedings : 5th to 9th September 2011 at the CCH - Congress Centre and International Fair Hamburg in Germany
München: WIP-Renewable Energies, 2011
ISBN: 3-936338-27-2
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <26, 2011, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

In this work we investigated the properties of silicon oxide (SiOy) and silicon nitride (SiNx) layers deposited by a large area 13.56 MHz PECVD system as well as of the combined SiO-SiN stack . The bonding nature of the layers was determined by FTIR spectroscopy. Furthermore, a characterization of the interface trap density as well as of the fixed charges in the different passivating layers was performed by preparing and measuring metal-insulator-semiconductor samples and supplemented by lifetime measurements. We show how temperature steps as well as x-ray and UV-radiation change the layer properties: High energetic radiation leads to a depassivation of the surface deposited with the SiO-SiN stack. The low surface recombination velocity can be fully recovered by an annealing step. In addition, rear side passivated solar cells were fabricated with a SiO-SiN stack as passivation layer and the rear surface recombination velocity of the solar cells was measured by the CELLO technique.