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Reliability characterization of dielectrics in 200V trench capacitors

Poster at Workshop on Dielectrics in Microelectronics, WoDiM 2012, Dresden
Zuverlässigkeitsuntersuchungen an Siliciumnitrid-Dielektrika in 200V Grabenkondensatoren
 
: Erlbacher, Tobias

:
Poster urn:nbn:de:0011-n-2201273 (117 KByte PDF)
MD5 Fingerprint: 26dd8ac126349d0da4b9c4043512d585
Erstellt am: 8.12.2012


2012, 1 Folie
Workshop on Dielectrics in Microelectronics (WoDiM) <17, 2012, Dresden>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
capacitance; capacitor; silicon; dielectric reliability; monolithic integration; power module

Abstract
Conventional reliability tests of silicon nitride dielectrics in 200V trench capacitors were carried out to predict lifetime. The applicability of constant voltage/current stress and ramped voltage/current stress tests was investigated. The methods which are typically used for planar thin dielectrics did not yield feasible predictions. In particular, charge-to-breakdown value does not appear to be a suitable measurement for the determination of the dielectric failure in trench capacitors. Lifetime extrapolation using ramped voltage stress tests can be performed. However, these results strongly depend on the delay time of the test due to charge trapping effects in the silicon nitride layer.

: http://publica.fraunhofer.de/dokumente/N-220127.html