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Piezoresistive sensors based on SWCNTs produced by unique pulsed arc discharge

Poster at SSD 2012, International Conference on Sensors, Circuits and Instrumentation Systems as part of the 9th International Multi-Conference on Systems, Signals & Devices, March 20 - 23, 2012, Chemnitz, Germany
Piezoresistive Sensoren auf Basis von SWCNTs, die mit einem gepulsten Lichtbogenverfahren des Fraunhofer hergestellt werden
 
: Lehmann, Beata

:
Poster urn:nbn:de:0011-n-2195143 (13 MByte PDF)
MD5 Fingerprint: cf15cf03b0e1538003ee89ac4f56c816
Erstellt am: 21.11.2012


2012, 1 Folie
International Conference on Sensors, Circuits and Instrumentation Systems (SCI) <2012, Chemnitz>
International Multi-Conference on Systems, Signals & Devices (SSD) <9, 2012, Chemnitz>
Englisch
Poster, Elektronische Publikation
Fraunhofer IWS ()
piezoresistive sensor; SWCNT; pulsed arc discharge

Abstract
Modern pressure sensors are based on the piezoresistive effect. This effect is very high using CNTs. Narrow bandgap single walled carbon nanotubes (SWCNT) are outstanding qualified for this type of sensors. They are produced by unique pulsed arc discharge at the Fraunhofer Institute for Material and Beam Technology (FhG-IWS). The process has not only a high manufacturing output and efficiency but the ratio of semiconducting (sc)-SWCNTs is also scalable up to over 70 % depending on the process parameters selected. After purification these sc-SWCNTs are dispersed and integrated in polymer films (e. g. polysulfone, epoxide). The challenge is to achieve a suitable distribution of the sc-SWCNTs in the polymer film for electrical percolation and resulting piezoresistive sensitivity.

: http://publica.fraunhofer.de/dokumente/N-219514.html