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Low temperature metal interdiffusion bonding for micro devices

 
: Frömel, J.; Lin, Y.; Wiemer, M.; Gessner, T.; Esashi, M.

:

Institute of Electrical and Electronics Engineers -IEEE-:
3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 : Tokyo, Japan; 22-23 May 2012
New York, NY: IEEE, 2012
ISBN: 978-1-4673-0743-7 (Print)
ISBN: 978-1-4673-0742-0 (Electronic)
S.163
International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) <3, 2012, Tokyo>
Englisch
Konferenzbeitrag
Fraunhofer ENAS ()

Abstract
We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.

: http://publica.fraunhofer.de/dokumente/N-218817.html