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Manipulation of the reverse bias behaviour of silicon solar cells

 
: Thaidigsmann, Benjamin; Werner, Sabrina; Gutscher, Simon; Fertig, Fabian; Clement, Florian; Wolf, Andreas; Biro, Daniel

:
Volltext urn:nbn:de:0011-n-2160514 (532 KByte PDF)
MD5 Fingerprint: 4bb965a8d677385e7958f6d715daf174
Erstellt am: 19.10.2012


Japan Society of Applied Physics -JSAP-:
21th International Photovoltaic Science and Engineering Conference, PVSEC 2011. Technical Digest. CD-ROM : November 28 - December 2, 2011, Fukuoka, Japan, Hilton Fukuoka Sea Hawk
Tokyo: ICS Convention Design, 2011
2 S.
International Photovoltaic Science and Engineering Conference (PVSEC) <21, 2011, Fukuoka>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
solar cell; bypass diode; screen printing; PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

Abstract
In this work the reverse bias behaviour of HIP-MWT (high performance metal wrap through) solar cells is investigated. Therefore enhanced rear dielectrics are proved due to their reverse characteristics. Depending on the selected rear dielectric the fabricated cells can be used as integrated bypass diodes or for conventional module configuration. Efficiencies up to 19.3 % on 125 x 125 mm2 (pseudosquare) large p-type Czochralski grown silicon wafers are reached for that cell type with an improved reverse bias stability.

: http://publica.fraunhofer.de/dokumente/N-216051.html