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Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC

Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
: Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter

Poster urn:nbn:de:0011-n-2158786 (1.2 MByte PDF)
MD5 Fingerprint: ff2e6e5bf17815596ad57fafcb5badee
Erstellt am: 10.10.2012

2012, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
Poster, Elektronische Publikation
Fraunhofer IISB ()
epitaxial layers; CVD; structural defect; minority carrier lifetime

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.