Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Correlation-aware analysis of the impact of process variations on circuit behavior

Presentation held at SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, September 5-7, 2012; Denver, Colorado
Korrelationsbewusste Analyse des Einflusses von Prozessvariationen auf Verhalten von integrierten Schaltungen
 
: Burenkov, Alex

:
Preprint urn:nbn:de:0011-n-2142463 (1.1 MByte PDF)
MD5 Fingerprint: e19278a5a54774fa4f3df82917a0456e
Erstellt am: 12.10.2012


2012, 4 S.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <17, 2012, Denver/Colo.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
SRAM; process variation; SOI MOSFET; correlation; simulation

Abstract
Performance variations of a 6-transistor SRAM cell were analyzed using coupled process, device, and circuit simulation. The propagation of process-induced variations to device and circuit performance was simulated. Variation sources from lithography, etching, and temperature profiles in rapid thermal annealing were considered and correlations between variations and performance parameters were studied.

: http://publica.fraunhofer.de/dokumente/N-214246.html