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Semiconductor nanoparticles for electronic device integration on foils

: Hilleringmann, U.; Wolff, K.; Assion, F.; Vidor, F.F.; Wirth, G.I.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Africon 2011 : Falls Resort and Conference Center, Livingstone, Zambia, 13 - 15 September 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-61284-992-8 (Print)
ISBN: 978-1-61284-993-5
6 S.
Conference "Africon" <2011, Livingstone>
Fraunhofer ENAS ()

Semiconducting nanoparticles allow the integration of field effect transistors by spin coating of a dispersion onto a pre-integrated metal structure for the electrodes. Thin film transistors with inverted coplanar setup show mobilities of up to 0.05 cm2/Vs in case of silicon nanoparticles, 0.1 cm2/Vs in case of zinc oxide material. Transistors consisting of a single nanoparticle are demonstrated, but the yield is low. Due to the low temperature processing (<;200°C), nanoparticle transistor integration on plastic substrates is possible. First inverter structures consisting of two nanoparticle field effect transistors integrated on oxidized silicon wafers are demonstrated.