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Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P

Poster at 17th International Photovoltaic Science and Engineering Conference (PVSEC-17), 03.-07.12.2007, Fukuoka, Japan
 
: Beljakowa, S.; Pensl, G.; Rommel, M.

:
Poster urn:nbn:de:0011-n-2124598 (2.5 MByte PDF)
MD5 Fingerprint: e62f55b15f0f603caf6cb1a244c9da7f
Erstellt am: 4.9.2012


2007, 1 Folie
International Photovoltaic Science and Engineering Conference (PVSEC) <17, 2007, Fukuoka>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
carrier lifetime; DLTS; µ-PCD; Gallium; manganese; silicon

: http://publica.fraunhofer.de/dokumente/N-212459.html