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Strained silicon photonics

 
: Schriever, C.

:
Volltext urn:nbn:de:0011-n-2116896 (1.5 MByte PDF)
MD5 Fingerprint: e8bc590a20907d555989ddc1d297306f
Erstellt am: 23.5.2014


Materials 5 (2012), Nr.5, S.889-908
ISSN: 1996-1944
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()
silicon photonics; strain engineering; nonlinear optical properties

Abstract
A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

: http://publica.fraunhofer.de/dokumente/N-211689.html