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GaN-based millimeter-wave monolithic integrated circuits

 
: Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O.

:

Institute of Electrical and Electronics Engineers -IEEE-:
MIKON 2012, 19th International Conference on Microwave, Radar and Wireless Communications. Vol.1 : 21-23 May 2012, Warsaw/Poland
Piscataway/NJ: IEEE, 2012
ISBN: 978-1-4577-1435-1
S.97-98
International Conference on Microwave, Radar and Wireless Communications (MIKON) <19, 2012, Warsaw>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN power amplifier; monolithic millimeterwave integrated circuit; high electron mobility transistor

Abstract
Monolithic millimeter-wave integrated circuits based on AlGaN/GaN high electron mobility transistors have been processed in order to realize high power transmitters as well as efficient receivers operating at frequencies around 60 GHz and 77 GHz, respectively.

: http://publica.fraunhofer.de/dokumente/N-210043.html