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Microscopic degradation analysis of RF-stressed AlGaN/GaN HEMTs

 
: Gütle, F.; Baeumler, M.; Dammann, M.; Cäsar, M.; Walcher, H.; Waltereit, P.; Bronner, W.; Müller, S.; Kiefer, R.; Quay, R.; Mikulla, M.; Ambacher, O.; Graff, A.; Altmann, F.; Simon, M.

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Mai, Y.-W. (ed.):
Defects-Recognition, Imaging and Physics in Semiconductors XIV : 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XIV; held at Miyazaki City on September 25-29
Dürnten: Trans Tech Publications, 2012 (Materials Science Forum 725)
ISSN: 0255-5476
S.79-82
International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) <14, 2012, Miyazaki>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN degradation; electroluminescence microscopy; thermography; TEM

Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) stressed at 10 GHz and increased channel temperatures of T ~ 260 °C has been analyzed by electroluminescence microscopy (ELM) and infrared thermography (IRT). After stress a negative threshold shift is seen in the electrical characteristics. Based on the current dependence of the electroluminescence (EL) intensity image and a local increase of T this shift can be assigned to the degradation of one of its gate fingers. Transmission electron microscopy (TEM) images of this gate finger revealed structural changes along the drain-side edge of the gate.

: http://publica.fraunhofer.de/dokumente/N-210039.html