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70 nm low-noise metamorphic HEMT technology on 4 Inch GaAs wafers

: Leuther, A.; Tessmann, A.; Dammann, M.; Reinert, W.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Indium phosphide and related materials : Conference proceedings 2003 International Conference Indium Phosphide and Related Materials. 12 - 16 May 2003, Fess Parker's Doubletree Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 2003
ISBN: 0-7803-7704-4
International Conference on Indium Phosphide and Related Materials (IPRM) <15, 2003, Santa Barbara/Calif.>
Fraunhofer IAF ()

A 70 nm gate length metamorphic HEMT technology will be presented. Extrinsic cut-off frequencies of f(ind t)= 293 GHz and f(ind max) = 337 GHz were achieved. The transistors have an on-state breakdown voltage of 1.7 V. A median time to failure of 1x10(exp 6) h at 125 °C and an activation energy of 1.3 eV was extrapolated based on a 10 % g(ind m,max) degradation in air. This is significant less than the 1.8 eV activation energy of our 100 nm gate-length 65 % In process which is probably due to hot electron effects. The MMIC-process obtains high yields on transistor and circuit level. Low-noise amplifiers demonstrate a small signal gain of 13 dB and a noise figure of 2.8 dB at 94 GHz. The achieved results are comparable to state-of-the-art InP-based HEMT technologies.