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Recent developments in carrier lifetime imaging

Presentation held at 15th Workshop on Crystalline Silicon Solar Cells and Modules. Materials an Processes
: Warta, W.; Schubert, M.C.; Isenberg, J.; Bermejo, S.; Riepe, S.; Diez, S.

Volltext urn:nbn:de:0011-n-2099374 (399 KByte PDF)
MD5 Fingerprint: c1e55a995040c3c2939f26b415d40c65
Erstellt am: 28.11.2012

2005, 8 S.
Workshop on Crystalline Silicon Solar Cells and Modules - Materials and Processes <15, 2005, Vail/Colo.>
Vortrag, Elektronische Publikation
Fraunhofer ISE ()

An overview is given on recent developments at Fraunhofer ISE in the field of infrared carrier lifetime imaging. A combination of short acquisition times with high spatial resolution and high dynamic range under (quasi-)steady-state conditions gives the technique a high potential for the application in material and process characterization. Measuring in the emission mode provides access to the temperature dependence of lifetime and thus spatially resolved temperature dependent lifetime spectroscopy. Furthermore, images of injection dependent lifetimes are presented. For the anomalous increase at low injection a modelling description was developed. Assuming carrier trapping as origin of the increase, spatially resolved trap parameter analysis is possible. Finally, a new approach to suppress the anomalous increase by the application of subbandgap light is demonstrated.