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Temperature dependent carrier lifetime images

: Schubert, M.C.; Isenberg, J.; Rein, S.; Warta, W.

Volltext urn:nbn:de:0011-n-2098806 (633 KByte PDF)
MD5 Fingerprint: ee1259964e53728c71f93a3b3a1823b6
Erstellt am: 26.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Carrier Density Imaging (CDI) is a convenient tool to measure actual lifetimes in silicon with high spatial resolution. CDI is based on the detection of infrared radiation being absorbed and emitted by free carriers. Recently, a measurement mode was developed where the experimental conditions favors the emission of free carriers. This article exemplifies the advantages of emission CDI. Measurement time can be decreased to 1 s for standard multicrystalline silicon and excellent signal to noise ratios can be achieved if the temperature of the sample is increased moderately. Measuring lifetime in a wide temperature range up to 270 °C enables spatially resolved lifetime spectroscopy. First results of an intentionally contaminated molybdenum sample and a sample of multicrystalline silicon are presented.