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Emitter epitaxy for crystalline silicon thin-film solar cells

: Schmich, E.; Reber, S.; Hees, J.; Trenkle, F.; Schillinger, N.; Willeke, G.

Volltext urn:nbn:de:0011-n-2098647 (678 KByte PDF)
MD5 Fingerprint: bae7122662d4c476b6d5f2eed3d7a202
Erstellt am: 29.9.2012

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

This paper presents results of crystalline silicon thin-film solar cells (cSiTF) with in-situ epitaxial emitters deposited by high temperature atmospheric pressure CVD. Emitters formed by epitaxy could provide an alternative for an adjustable emitter shape with a short deposition time. Simulation results reveal a large potential deposited emitters were characterized using SIMS, SRP and SEM. For preliminary investigations, solar cells without texturization from p- and n-typ wafers were processed with epitaxial emitters. Efficiencies up to 14.2% of boron doped emitters on n-type Fz, as well as efficiencies up to 13.9% of phosphorus layers on cSiTF are presented.