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2008
Conference Paper
Titel
Characterization and numerical modeling of the temperature-dependent behavior of GaAs solar cells
Abstract
This paper presents results of a study on the temperature-dependent behavior of GaAs single-junction solar cells, in which both experimental and simulation tools were used. In order to enable measurements at different temperatures a cryostat was integrated into the corresponding experimental setup at Fraunhofer ISE. Measurements of the external quantum efficiency (EQE) and the IV curve under illumination were carried out in a wide temperature range between 200 K and 400 K. An exemplary GaAs solar cell was modeled numerically in a semiconductor simulation environment to obtain a deeper understanding of the cellâ s temperature-dependent behavior as well as to enable future structure optimization for different operating temperatures.
Author(s)