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2008
Conference Paper
Titel
Numerical simulation and modeling of III-V multi-junction solar cells
Abstract
This paper presents results of numerical simulations of a III-V dual-junction solar cell including tunnel diode and Bragg reflector. The simulations are carried out in a commercially available semiconductor simulation environment. For the computation of the quantum efficiency of the subcells a special procedure using biasillumination and bias-voltage is implemented. The model is validated by a comparison of simulated external quantum efficiency (EQE) and IV curve with experimental data. A very good agreement is achieved. Simulations are used to illustrate the influence of the Bragg reflector and the tunnel diode on the EQE. Additionally, the capabilities of the model for design optimization are exemplified by an adaption of the subcells' thicknesses.
Author(s)