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Amorphous silicon carbide hetero-emitters for high efficiency silicon solar cells

: Janz, S.; Ziegler, J.; Pysch, D.; Suwito, D.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-2096571 (513 KByte PDF)
MD5 Fingerprint: 501995a33bc59b7a08f79b4c0bdad50d
Erstellt am: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

We investigated different amorphous SixC1-x:H layers for their applicability as hetero-emitter materials. The deposition with Plasma Enhanced Chemical Vapour Deposition (PECVD) in a preliminary industrial stage plasma reactor was done without any wet-chemical pre-cleaning directly before the deposition. In a first step the single layers were characterised optically with Spectral Ellipsometry (SE) which showed an enhanced transparency of a-SixC1-x:H layers with a very low carbon content below 10 % compared to a-Si:H. On both sides passivated Si float zone wafers we measured minority carrier lifetimes with the Quasi Steady-State Photoconductance (QSS-PC) method which showed excellent passivation performance for 70 nm thick layers and a detrimental performance loss for thicknesses below 10 nm. With the Constant Photocurrent Method (CPM) we found a significant increase of the Urbach energy when incorporating phosphorous into the layer network. The solar cell had a hetero-junction on the front-side and a passivated rear-side (SiO2) with local contacts (PERC). The first cell batches were strongly influenced by technological problems such as material inhomogeneities over the cell area, contaminations on the surface and a poor grid finger/ITO adhesion behaviour. Nevertheless, we could achieve an excellent open circuit voltage of 674 mV.