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Laser-fired contact silicon solar cells on p- and n-substrates

: Glunz, S.W.; Schneiderlöchner, E.; Kray, D.; Grohe, A.; Hermle, M.; Kampwerth, H.; Preu, R.; Willeke, G.

Volltext urn:nbn:de:0011-n-2095552 (481 KByte PDF)
MD5 Fingerprint: 235d6a806d2aaa953f9f63f1bcd49896
Erstellt am: 25.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

A fabrication process is described that is simple, uses conventional equipment and yet is capable of producing highefficiency crystalline silicon solar cells. It is based on a deep phosphorus diffusion to form the front emitter region and a deep aluminum diffusion to form a back BSF region. The total charge of phosphorus atoms is controlled to the desired level in a conventional open-tube POCl, furnace by adjusting the mix of gases that flow into it, the time and the temperature. A thin SiO, layer is grown in the same diffusion tube to passivate the surface. After aluminum deposition on the back side, the wafers go directly to a second furnace where both dopants are drove in for a relatively long time and at a high temperature. One of the nicest things of this process is that it minimizes wet etching and cleaning steps. The resulting devices have a relatively thick, moderately-doped and surface-passivated emitter well suited for low cost metallization techniques.