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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

: Kalbitz, R.; Frübing, P.; Gerhard, R.; Taylor, D.M.


Applied Physics Letters 98 (2011), Nr.3, Art. 033303, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAP ()

Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.