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Laser patterning of thin films for luminescence applications

: Höche, T.; Lorenz, M.; Müller, A.; Grundmann, M.; Mittwoch, K.

International Microelectronics and Packaging Society -IMAPS-; Institute of Electrical and Electronics Engineers -IEEE-:
18th European Microelectronics and Packaging Conference, EMPC 2011. Proceedings. CD-ROM : Brighton, 12th-15th September 2011
Andover, Hampshire: IMAPS UK, 2011
ISBN: 978-0-9568086-0-8
ISBN: 978-1-4673-0694-2 (Print)
Art. 6142421
European Microelectronics and Packaging Conference (EMPC) <18, 2011, Brighton>
Fraunhofer IWM ()

Fresnoite, Ba 2TiSi 2O 8, possesses a very intense and broad photoluminescence band similar to that of the most intense oxide scintillator materials. As such, fresnoite is to be considered a well-suited material for photonics applications, including phosphors. Complete miscibility with the isotypic fresnoite compounds Ba 2TiGe 2O 8 and Sr 2TiSi 2O 8 as well as doping with rare-earth ions facilitates colour-space design. In order to qualify fresnoite as a material for photonic applications, fresnoite thin films were synthesized on a-plane sapphire, upon which, in comparison to growth on silicon (100), quartz, and MgO (100), the texture is most pronounced. Infrared-laser direct writing in amorphous fresnoitic films on sapphire allows a spatially resolved crystallization and an enhancement of the luminescence intensity by about three orders of magnitude. The latter fact can be utilized for UV-sensitive marking and wavelength converters.