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Nanomechanical characterization and metrology for low-k and ULK materials

: Hangen, U.D.; Yeap, K.-B.; Vodnick, D.; Zschech, E.; Li, H.; Vlassak, J.


Seiler, D.G. ; American Institute of Physics -AIP-, New York:
Frontiers of Characterization and Metrology for Nanoelectronics 2011 : Grenoble (France), 23-26 May 2011
New York, N.Y.: AIP Press, 2011 (AIP Conference Proceedings 1395)
ISBN: 978-0-7354-0965-1
ISBN: 978-0-7354-0973-6
ISSN: 0094-243X
International Conference on Frontiers of Characterization and Metrology for Nanoelectronics <2011, Grenoble>
Fraunhofer IZFP, Institutsteil Dresden ( IKTS-MD) ()

The dielectric constant of dielectric films used in on-chip interconnect stacks of microelectronic products is controlled by the deposited material for low-k and by the incorporation of porosity/voids for ultra-low-k (ULK) materials. The porosity has a significant and direct influence on the mechanical and interfacial properties of these materials. Pore volume fraction and spatial distribution have a detrimental impact on the material stiffness and fracture toughness, film adhesion, sensitivity to CMP and device mechanical reliability during other processing steps. The nanomechanical testing of low-k films - namely nanoindentation and nanoscratch measurements - allows an indirect characterization of the porosity of a ULK film. These tests can resolve variations with nanometer scale spatial resolution as well as changes of porosity of the material as a function of film thickness, all of which significantly impact the mechanical reliability of the device.