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Development of metamorphic buffer structures for inverted metamorphic solar cells

: Klinger, V.; Wekkeli, A.; Roesener, T.; Scheer, M.; Dimroth, F.


IEEE Electron Devices Society:
37th IEEE Photovoltaic Specialists Conference, PVSC 2011 : 19-24 June 2011, Seattle, WA, USA
Piscataway: IEEE, 2011
ISBN: 978-1-4244-9966-3
ISBN: 978-1-4244-9965-6 (print)
Photovoltaic Specialists Conference (PVSC) <37, 2011, Seattle/Wash.>
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Alternative Photovoltaik-Technologien

Lattice-mismatched materials can help to improve the theoretical efficiency potential of today's III-V multi-junction solar cells. Carefully designed buffer structures are incorporated in these solar cells to grade the lattice constant and relax the crystal. These buffer layers need to result in low surface roughness, low threading dislocation density and high relaxation. Ga 1-xIn xP buffer structures grown on GaAs substrates with different orientation were investigated regarding surface roughness, lattice tilt and relaxation. The buffer structures were varied in stress and strain by a tuning layer with altering composition. Close to 100 % relaxation of the crystal lattice could be reached for tuning layers with a 0.3 % larger lattice-constant compared to the target value. From the AFM data, a preference for (111)B misoriented substrates was found, since these buffer structures show the smallest RMS roughness.