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2012
Conference Paper
Titel
Formation of InAs/InGaAsP quantum dashes
Abstract
Self-assembled InAs/InGaAsP/InP(001) nanostructures are investigated using cross-sectional scanning tunneling microscopy. Atomically resolved images show elongated nanostructures with binary composition and a truncated pyramidal shape. The investigation of the InGaAsP/InP interface shows a tendency of the quaternary matrix material towards decomposition and indicates InAs quantum-dash formation by nucleation on initially slightly decomposed InAs-rich regions of the InGaAsP.