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Impact of thin intermediate thermal oxide films on the properties of PECVD passivation layer systems

: Wolf, A.; Mack, S.; Brosinsky, C.; Hofmann, M.; Saint-Cast, P.; Biro, D.


IEEE Electron Devices Society:
37th IEEE Photovoltaic Specialists Conference, PVSC 2011 : 19-24 June 2011, Seattle, WA, USA
Piscataway: IEEE, 2011
ISBN: 978-1-4244-9966-3
ISBN: 978-1-4244-9965-6 (print)
Photovoltaic Specialists Conference (PVSC) <37, 2011, Seattle/Wash.>
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

We investigate the role of a few nm thin thermal oxide films in PECVD passivation layer systems. Our results show that an intermediate thermal oxide layer located between the Si substrate and the PECVD layers has a strong impact on the interface properties. Capacitance-voltage measurements reveal that for Al 2O 3 and SiN X passivation layers, the oxide film lowers or suppresses the formation of fixed charges. Adjusting the oxide film thickness therefore permits the control of band bending and thus field effect passivation at the interface. For SiO X capping layers, a thermal oxide thickness of a few nm is sufficient to reduce the interface trap density, enabling surface recombination velocities as low as a few cm/s.