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Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

: Meissner, E.; Schweigard, S.; Friedrich, J.; Paskova, T.; Udwary, K.; Leibiger, G.; Habel, F.


Journal of Crystal Growth 340 (2012), Nr.1, S.78-82
ISSN: 0022-0248
Fraunhofer IISB ()

In this study we report the potential and limitations of the cathodoluminescence dark spot (DS) counting as a method for the determination of dislocation density and distribution in GaN, produced by the hydride vapour phase epitaxy (HVPE). Different GaN sample series (s.i. GaN:Fe and n-type GaN:Si) were used, in order to study the dependence of the results of the DS-counting on the dopant type and concentration. By the direct comparison of these results to classical defect selective etching, the DS-measurements were validated. It could be shown that each of the both methods have their particular restrictions, which must be considered in their application.