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Enthalpy based modeling of pulsed excimer laser annealing for process simulation

 
: Hackenberg, M.

:
Preprint urn:nbn:de:0011-n-2069019 (352 KByte PDF)
MD5 Fingerprint: 87c7c8c94abf0a6457e42b4e14efe396
Erstellt am: 20.12.2012


Pryds, N. ; European Materials Research Society -EMRS-:
EMRS 2011 Spring, Symposium J "Laser Materials Processing for Micro and Nano Applications" : May 9-13, 2011, Nice, France
Amsterdam: Elsevier, 2012 (Applied surface science 258.2012, Nr.23)
ISSN: 0169-4332
S.9347-9351
Symposium J "Laser Materials Processing for Micro and Nano Applications" <2011, Nice>
European Materials Research Society (Spring Meeting) <2011, Nice>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()

Abstract
We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of 150 ns and a wavelength of 308 nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of lase r energy density fluctuations on the melt depth.

: http://publica.fraunhofer.de/dokumente/N-206901.html