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Hysteresis of in situ CCVD grown graphene transistors

: Wessely, P.J.; Wessely, F.; Birinci, E.; Riedinger, B.; Schwalke, U.

Volltext ()

Electrochemical and solid state letters 15 (2012), Nr.4, S.K31-K34
ISSN: 1099-0062
ISSN: 1944-8775
Deutsche Forschungsgemeinschaft DFG
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()
graphene transistors; CCVD; bilayer graphene

In this paper we report on a novel method to fabricate graphene transistors directly on oxidized silicon wafers without the need to transfer graphene. By means of catalytic chemical vapor deposition (CCVD) the in situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene field-effect transistors (BiLGFETs) are realized directly on oxidized silicon substrate. In situ CCVD grown BiLGFETs possess unipolar p-type device characteristics with an extremely high onoff-current ratio up to 1 × 10 7. With this novel fabrication method hundreds of large scale in situ CCVD grown graphene FETs are realized simultaneously on one 2'' wafer in a silicon CMOS compatible process.