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Semipolar GaInN quantum well structures on large area substrates

: Scholz, F.; Schwaiger, S.; Däubler, J.; Tischer, I.; Thonke, K.; Neugebauer, S.; Metzner, S.; Bertram, F.; Christen, J.; Lengner, H.; Thalmair, J.; Zweck, J.


Physica status solidi. B 249 (2012), Nr.3, S.464-467
ISSN: 0031-8957
ISSN: 0370-1972
Fraunhofer IAF ()

In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c-direction, we have etched trenches into r-plane and n-plane sapphire wafers. The GaN MOVPE growth then starts from c-plane-like sidewalls of these trenches, eventually leading to semipolar {1122} and {1011} surfaces with very good properties. GaInN quantum wells grown on such surfaces show very uniform properties on {1011} surfaces, but still reflect the stripe geometry on {1122} surfaces by a slightly larger In uptake at the stripe coalescence regions.