Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Semipolar GaInN quantum well structures on large area substrates

 
: Scholz, F.; Schwaiger, S.; Däubler, J.; Tischer, I.; Thonke, K.; Neugebauer, S.; Metzner, S.; Bertram, F.; Christen, J.; Lengner, H.; Thalmair, J.; Zweck, J.

:

Physica status solidi. B 249 (2012), Nr.3, S.464-467
ISSN: 0031-8957
ISSN: 0370-1972
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c-direction, we have etched trenches into r-plane and n-plane sapphire wafers. The GaN MOVPE growth then starts from c-plane-like sidewalls of these trenches, eventually leading to semipolar {1122} and {1011} surfaces with very good properties. GaInN quantum wells grown on such surfaces show very uniform properties on {1011} surfaces, but still reflect the stripe geometry on {1122} surfaces by a slightly larger In uptake at the stripe coalescence regions.

: http://publica.fraunhofer.de/dokumente/N-206845.html