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First principle studies on molecular doping of ZnO thin films by As2O3

: Sorgenfrei, T.; Bachem, K.-H.; Schneider, J.; Kirste, L.; Kunzer, M.; Fiederle, M.


Crystal research and technology 47 (2012), Nr.3, S.293-298
ISSN: 0023-4753
ISSN: 0232-1300
Fraunhofer IAF ()

This work investigates the extrinsic molecular doping of zinc oxide (ZnO) thin films grown by plasma enhanced molecular beam epitaxy (P-MBE). The dopant was thermally evaporated arsenic trioxide (formula: As 2O 3 in the solid state), which appears as As 4O 6 molecule in the gaseous phase. Cracking experiments of these As4O6 molecules were made using a radio frequency oxygen plasma. Structural, chemical and optical investigations were made with (High Resolution) X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and photoluminescence (PL). These results show high incorporation rates (about 2x10 18 cm -3) and optical activity of the dopant.