Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio

: Wessely, P.J.; Wessely, F.; Birinci, E.; Beckmann, K.; Riedinger, B.; Schwalke, U.

Postprint urn:nbn:de:0011-n-2067291 (683 KByte PDF)
MD5 Fingerprint: bacb8e0e672594aa05f93e9bf54160f4
Erstellt am: 23.4.2013

Physica. E 44 (2012), Nr.7-8, S.1132-1135
ISSN: 1386-9477
Deutsche Forschungsgemeinschaft DFG
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IWM ()
graphene transistors; CCVD; bilayer graphene

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1×10 7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.